High-NA EUV
The next generation of EUV lithography with a higher numerical aperture (NA 0.55 vs today's 0.33), which draws even finer patterns. Crucial for nodes beyond ~2 nm. The machines cost around 350+ million dollars each and are ASML's most advanced.
Idea: higher NA = the optics capture light at a wider angle → better resolution, finer features without multi-patterning. It enables continued scaling where regular EUV starts to run out. Trade-off: a smaller exposure field (requires "stitching" patterns), enormous cost and complexity. Intel was first to bring in High-NA tools (for the 18A/14A nodes) as part of its comeback strategy; TSMC and Samsung follow more cautiously due to the cost. One of the most expensive and strategic investments in the semiconductor industry. Related to EUV lithography and gate-all-around.