FeRAM Ferroelectric RAM
Non-volatile memory based on ferroelectric polarisation of thin PZT film. Faster than flash, lower energy, but expensive per bit.
Fujitsu, Texas Instruments, Cypress (now Infineon) manufacture. Used in smart meters, RFID tags, IoT sensors where flash write energy is a problem. Size max ~64 Mbit per chip — too small for consumer products. Future: HfO₂-based FeRAM on FinFET nodes promises cheaper mass production.